Comment on "Correlation between Bulk Thermodynamic Measurements and the Low-Temperature-Resistance Plateau in SmB6"

Kai Chen; Jean-Paul Kappler

Comment on "Correlation between Bulk Thermodynamic Measurements and the Low-Temperature-Resistance Plateau in SmB6"

Materials Science 2015-03-16 v1

Authors: Kai Chen , Jean-Paul Kappler

Abstract

Low-temperature-resistivity plateau observed in $\rm SmB_6$ single crystal,which is due to surface, not bulk, conduction has been confirmed from electrical transport measurements. Recently, the correlation between bulk thermodynamic measurements and the low-temperature-resistance plateau in $\rm SmB_6$ have been investigated and a change in Sm valence at the surface has been obtained from x-ray absorption spectroscopy and x-ray magnetic circular dichroism. Here we show that the statement of the report are not supported by the results from x-ray absorption spectroscopy and x-ray magnetic circular dichroism.

Keywords

SmB6 low-temperature resistance plateau surface conduction bulk thermodynamic measurements x-ray absorption spectroscopy x-ray magnetic circular dichroism valence change

Cite

@article{arxiv.1503.03901,
  title  = {Comment on "Correlation between Bulk Thermodynamic Measurements and the Low-Temperature-Resistance Plateau in SmB6"},
  author = {Kai Chen and Jean-Paul Kappler},
  journal= {arXiv preprint arXiv:1503.03901},
  year   = {2015}
}

Comments

2 pages, 1 figure, comments

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