Coherent versus Incoherent Transport in Layered Doped Mott Insulators

H. C. Lee; P. B. Wiegmann

doi:10.1103/PhysRevB.53.11817

Coherent versus Incoherent Transport in Layered Doped Mott Insulators

Condensed Matter 2009-10-28 v1

Authors: H. C. Lee , P. B. Wiegmann

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

There exist strong experimental evidences for the dimensional cross-over from two to three dimensions as \lan compounds are overdoped. In this paper we describe the dimensional cross-over of the layered correlated metal in the gauge theory framework. In particular, we obtain the anomalous exponent 3/2 for the temperature dependence of resistivity observed in overdoped \lan.

Keywords

dimensional crossover layered correlated metal gauge theory resistivity anomalous exponent doped Mott insulator

Cite

@article{arxiv.cond-mat/9510173,
  title  = {Coherent versus Incoherent Transport in Layered Doped Mott Insulators},
  author = {H. C. Lee and P. B. Wiegmann},
  journal= {arXiv preprint arXiv:cond-mat/9510173},
  year   = {2009}
}

Comments

RevTex, 21 pages, no figures. Submitted to Phys. Rev. B

Related papers

View all related →