Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer
Abstract
The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics.
Cite
@article{arxiv.2511.17231,
title = {Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer},
author = {Jiaxin Chen and Hongsheng Zheng and Hongliang Chen and Qia Shen and Chang Pan and Zhenyi Zheng and Hemian Yi and Dandan Guan and Xiaoxue Liu and Yaoyi Li and Shiyong Wang and Hao Zheng and Canhua Liu and Jinfeng Jia and Jingsheng Chen and Ruidan Zhong and Lei Wang and Xuepeng Qiu and Yumeng Yang and Aurélien Manchon and Liang Liu},
journal= {arXiv preprint arXiv:2511.17231},
year = {2025}
}