Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors
Abstract
A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn\_n O\_m and In\_n P\_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In\_4 P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favourable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.
Keywords
Cite
@article{arxiv.1710.08215,
title = {Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors},
author = {Alexander Bulgakov and Anton Evtushenko and Yuri Shukhov and Igor Ozerov and Wladimir Marine},
journal= {arXiv preprint arXiv:1710.08215},
year = {2017}
}