Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum (VBM) of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain (∼4%) is applied along the 1D chain direction, leading to a sizable spin splitting (∼0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.
@article{arxiv.2308.04350,
title = {Chirality-induced spin splitting in 1D InSeI},
author = {Shu Zhao and Jiaming Hu and Ziye Zhu and Xiaoping Yao and Wenbin Li},
journal= {arXiv preprint arXiv:2308.04350},
year = {2023}
}