Chiral Topological Excitons in a Chern Band Insulator
Abstract
A family of semiconductors called as Chern band insulator are shown to host exciton bands with non-zero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as and in electronic Chern insulator phase. The non-trivial topology can be experimentally observed both by non-local optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells and thin film are promising candidates for a platform of topological excitonics.
Keywords
Cite
@article{arxiv.1707.03136,
title = {Chiral Topological Excitons in a Chern Band Insulator},
author = {Ke Chen and Ryuichi Shindou},
journal= {arXiv preprint arXiv:1707.03136},
year = {2017}
}
Comments
5+ pages, 3 figures with supplemental materials