In order to provide an accurate theoretical description of current density voltage (J-V) characteristics of an organic heterojunction device over a wide range of electric fields at various temperatures, it is proposed that an accumulation of charge carriers at the heterojunction will lead to a reduction in the barrier height across the heterojunction. Two well-known hole transporting materials, 4,4,4-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (MTDATA) and N,N-diphenyl-N,N-bis(1-naphthyl)(1,1-biphenyl)-4,4diamine (NPB) were used to fabricate unipolar heterojunction devices. It is found that the J-V characteristics depends strongly on applied bias. The simulated J-V characteristics of the heterojunction device, with the modified injection model, are found to be in excellent agreement with the experimental data.
@article{arxiv.0808.1048,
title = {Charge carrier induced barrier height reduction at organic heterojunctions},
author = {S. W. Tsang and M. W. Denhoff and Y. Tao and Z. H. Lu},
journal= {arXiv preprint arXiv:0808.1048},
year = {2009}
}
Comments
4 pages, 4 figures, published in Phys. Rev. B Vol. 78, No. 8, http://link.aps.org/abstract/PRB/v78/e081301