Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current selectivities up to 102 can be achieved for measurements over a distance of 10{\mu}m under a moderate drift current density of 20{\mu}A/{\mu}m, meaning that the spin current in the arm that is off is only 1% of the current in the arm that is on. To illustrate the versatility of this approach, we show similar efficiencies in a device with four outputs and the possibility of multiplexer operation using spin drift. Finally, we explain how the effect can be optimized in graphene and two-dimensional semiconductors.
@article{arxiv.2004.11043,
title = {Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers},
author = {J. Ingla-Aynés and A A. Kaverzin and B. J. van Wees},
journal= {arXiv preprint arXiv:2004.11043},
year = {2020}
}