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Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure

Strongly Correlated Electrons 2009-10-31 v1
Authors: S. Das Sarma , E. H. Hwang
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Abstract

We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.

Keywords

2D hole gases GaAs heterostructure resistivity temperature-dependent screened charged impurity scattering phonon scattering non-monotonicity

Cite

@article{arxiv.cond-mat/0001057,
  title  = {Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure},
  author = {S. Das Sarma and E. H. Hwang},
  journal= {arXiv preprint arXiv:cond-mat/0001057},
  year   = {2009}
}

Comments

4 pages, 3 figures

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