Buckling-induced quadratic nonlinearity in silicon phonon waveguide structures
Abstract
We fabricated and characterized a single-crystal silicon phonon waveguide structure with lead zirconate titanate (PZT) piezoelectric transducers. The compressive stress in a silicon-on-insulator wafer causes a membrane waveguide to buckle, leading to the quadratic nonlinearity. The PZT transducer integrated in an on-chip configuration enables us to excite high-intensity mechanical vibration, which allows the characterization of nonlinear behavior. We observed a softening nonlinear response as a function of the drive power and demonstrated the mode shift and frequency conversion. This is the first report of the nonlinear behavior caused by the quadratic nonlinearity in a buckled phonon waveguide structure. This study provides a method to control the sign and the order of nonlinearity in a phonon waveguide by utilizing the internal stress, which allows the precise manipulation of elastic waves in phononic integrated circuits.
Cite
@article{arxiv.2112.00909,
title = {Buckling-induced quadratic nonlinearity in silicon phonon waveguide structures},
author = {Megumi Kurosu and Daiki Hatanaka and Hajime Okamoto and Hiroshi Yamaguchi},
journal= {arXiv preprint arXiv:2112.00909},
year = {2022}
}