Braiding lateral morphotropic grain boundary in homogeneitic oxides
Abstract
Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.
Keywords
Cite
@article{arxiv.2207.06566,
title = {Braiding lateral morphotropic grain boundary in homogeneitic oxides},
author = {Shengru Chen and Qinghua Zhang and Dongke Rong and Yue Xu and Jinfeng Zhang and Fangfang Pei and He Bai and Yan-Xing Shang and Shan Lin and Qiao Jin and Haitao Hong and Can Wang and Wensheng Yan and Haizhong Guo and Tao Zhu and Lin Gu and Yu Gong and Qian Li and Lingfei Wang and Gang-Qin Liu and Kui-juan Jin and Er-Jia Guo},
journal= {arXiv preprint arXiv:2207.06566},
year = {2022}
}
Comments
38 pages, 4 main figures