Bilateral Hydrogenation Realizes High-Temperature Quantum Anomalous Hall Insulator in 2D Cr$_{\text{2}}$Ge$_{\text{2}}$Te$_{\text{6}}$

The pursuit of high-temperature quantum anomalous Hall (QAH) insulators faces fundamental challenges, including narrow topological gaps and low Curie temperatures ($T_{\text{C}}$) in existing materials. Here, we propose a transformative strategy using bilateral hydrogenation to engineer a robust QAH state in the topologically trivial ferromagnetic semiconductor Cr$_{\text{2}}$Ge$_{\text{2}}$Te$_{\text{6}}$. First-principles calculations reveal that hydrogenation induces a topological phase transition in Cr$_{\text{2}}$Ge$_{\text{2}}$Te$_{\text{6}}$ by shifting its Dirac points-originally embedded in the conduction bands-to the vicinity of the Fermi level in Cr$_{\text{2}}$Ge$_{\text{2}}$Te$_{\text{6}}$H$_{\text{6}}$. This electronic restructuring, coupled with spin-orbit coupling, opens a global topological gap of 118.1 meV, establishing a robust QAH state with Chern number $C=$ 3. Concurrently, hydrogenation enhances ferromagnetic superexchange via the $d_{z^{2}}$-$p_{z}$-$d_{xz}$ channel, significantly strengthening the nearest-neighbor coupling $J_{\text{1}}$ by 3.06 times and switching $J_{\text{2}}$ from antiferromagnetic to ferromagnetic. Monte Carlo simulations predict a high $T_{\text{C}}$ = 198 K, sustained well above liquid nitrogen temperature and far exceeding pristine Cr$_{\text{2}}$Ge$_{\text{2}}$Te$_{\text{6}}$ (28 K). This work establishes surface hydrogenation as a powerful route to simultaneously control topology and magnetism in 2D materials, unlocking high-temperature QAH platforms for dissipationless spintronic applications.