English

Berry-phase induced entanglement of hole-spin qubits in a microwave cavity

Mesoscale and Nanoscale Physics 2021-07-14 v3 Other Condensed Matter

Abstract

Hole-spins localized in semiconductor structures, such as quantum dots or defects, serve to the realization of efficient gate-tunable solid-state quantum bits. Here we study two electrically driven spin 3/23/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than the conventional hole-spin qubit implementations. These results suggest that hole-spins are favorable qubits for scalable quantum computing by purely electrical means.

Keywords

Cite

@article{arxiv.2012.15804,
  title  = {Berry-phase induced entanglement of hole-spin qubits in a microwave cavity},
  author = {Marcin M. Wysokiński and Marcin Płodzień and Mircea Trif},
  journal= {arXiv preprint arXiv:2012.15804},
  year   = {2021}
}

Comments

4p + 9p of supplemental material