English

Band-structure trend in hole-doped cuprates and correlation with Tcmax

Condensed Matter 2009-10-31 v2

Abstract

By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the energy of the so-called axial-orbital as the essential, material-dependent parameter. It is uniquely related to the range of the intra-layer hopping. It controls the Cu 4s-character, influences the perpendicular hopping, and correlates with the observed Tc at optimal doping. We explain its dependence on chemical composition and structure, and present a generic tight-binding model.

Keywords

Cite

@article{arxiv.cond-mat/0012051,
  title  = {Band-structure trend in hole-doped cuprates and correlation with Tcmax},
  author = {E. Pavarini and I. Dasgupta and T. Saha-Dasgupta and O. Jepsen and O. K. Andersen},
  journal= {arXiv preprint arXiv:cond-mat/0012051},
  year   = {2009}
}

Comments

5 pages, Latex, 5 eps figures