We argue, based on band structure calculations and Eliashberg theory, that the observed decrease of Tc of Al and C doped MgB2 samples can be understood mainly in terms of a band filling effect due to the electron doping by Al and C. A simple scaling of the electron-phonon coupling constant λ by the variation of the density of states as function of electron doping is sufficient to capture the experimentally observed behavior. Further, we also explain the long standing open question of the experimental observation of a nearly constant π gap as function of doping by a compensation of the effect of band filling and interband scattering. Both effects together generate a nearly constant π gap and shift the merging point of both gaps to higher doping concentrations, resolving the discrepancy between experiment and theoretical predictions based on interband scattering only.
@article{arxiv.cond-mat/0411667,
title = {Band filling and interband scattering effects in MgB$_2$: C vs Al doping},
author = {Jens Kortus and Oleg V. Dolgov and Reinhard K. Kremer and Alexander A. Golubov},
journal= {arXiv preprint arXiv:cond-mat/0411667},
year = {2007}
}