We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.
@article{arxiv.0809.0578,
title = {Band bending and quasi-2DEG in the metallized $\beta$-SiC(001) surface},
author = {R. Rurali and E. Wachowicz and P. Hyldgaard and P. Ordejón},
journal= {arXiv preprint arXiv:0809.0578},
year = {2008}
}
Comments
accepted for publication in physica status solidi - Rapid Research Letters