Ballistic electron transport described by a generalized Schr\"{o}dinger equation
Abstract
We propose a Schr\"odinger equation of arbitrary order for modeling charge transport in semiconductors operating in the ballistic regime. This formulation incorporates non-parabolic effects through the Kane dispersion relation, thereby extending beyond the conventional effective mass approximation. Building upon the framework introduced in G.E. Aliffi, G. Nastasi, V. Romano, {ZAMP} {76}, 155 (2025), we derive a hierarchy of models, each governed by a Schr\"odinger equation of increasing order. As in the standard second-order case, the problem is formulated on a finite spatial domain with suitable transparent boundary conditions. These conditions are designed to simulate charge transport in a quantum coupler where an active region -- representing the electron device -- is connected to leads acting as reservoirs. We investigate several analytical properties of the proposed models and derive a generalized expression for the current, valid for any order. This formula includes additional terms that account for interference effects arising from the richer wave structure inherent in higher-order Schr\"odinger equations, which are absent in the effective mass approximation. Numerical simulations of a resonant tunneling diode (RTD) illustrate the key features of the solutions and highlight the impact of the generalized formulation on device behavior.
Keywords
Cite
@article{arxiv.2510.03765,
title = {Ballistic electron transport described by a generalized Schr\"{o}dinger equation},
author = {Giulia Elena Aliffi and Giovanni Nastasi and Vittorio Romano},
journal= {arXiv preprint arXiv:2510.03765},
year = {2026}
}