The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.
@article{arxiv.1010.5517,
title = {Atomic-scale compensation phenomena at polar interfaces},
author = {Matthew F. Chisholm and Weidong Luo and Mark P. Oxley and Sokrates T. Pantelides and Ho Nyung Lee},
journal= {arXiv preprint arXiv:1010.5517},
year = {2015}
}