We demonstrate the use of frequency-encoded light masks in neutral atom lithography. We demonstrate that multiple features can be patterned across a monotonic potential gradient. Features as narrow as 0.9 microns are fabricated on silicon substrates with a metastable argon beam. Internal state manipulation with such a mask enables continuously adjustable feature positions and feature densities not limited by the optical wavelength, unlike previous light masks.
@article{arxiv.physics/0209084,
title = {Atom lithography using MRI-type feature placement},
author = {J. H. Thywissen and M. Prentiss},
journal= {arXiv preprint arXiv:physics/0209084},
year = {2009}
}