English

Antifferomagnetic FeSe monolayer on SiTiO$_{3}$: The charge doping and electric field effects

Materials Science 2013-02-14 v1 Superconductivity

Abstract

We present theoretically the electronic structure of antiferromagnetic (AFM) FeSe monolayer on TiO2_{2} terminated SrTiO3_{3}(001) surface. It is revealed that the striking disappearance of the Fermi surface around the Brillouin zone (BZ) center can be well explained by the antiferromatnetic (AFM) phase. We show that the system has a considerable charge transfer from SrTiO3_{3}(001) substrate to FeSe monolayer, and so has a self-constructed electric field. The FeSe monolayer band structure near the BZ center is sensitive to charge doping, and the spin-resolved energy bands at BZ corner are distorted to be flattened by the perpendicular electric field. We propose a tight-binding model Hamiltonian to take these key factors into account. We also show that this composite structure is an ideal electron-hole bilayer system, with electrons and holes respectively formed in FeSe monolayer and TiO2_{2} surface layer.

Keywords

Cite

@article{arxiv.1302.2996,
  title  = {Antifferomagnetic FeSe monolayer on SiTiO$_{3}$: The charge doping and electric field effects},
  author = {Fawei Zheng and Zhigang Wang and Wei Kang and Ping Zhang},
  journal= {arXiv preprint arXiv:1302.2996},
  year   = {2013}
}

Comments

12 pages, 6 figures