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Antiferromagnetism and large magnetoresistance in GdBi single crystal

Strongly Correlated Electrons 2021-11-30 v1 Materials Science

Abstract

Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group Fm3ˉmFm\bar{3}m has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at TN=27.5T_{\rm N} = 27.5~K. The magnetization measurement performed at 22~K along the principal crystallographic direction [100] did not show any metamagnetic transition and no sign of saturation up to 77~T. Zero field electrical resistivity reveals a sharp drop at 27.527.5~K suggesting a reduction in the spin disorder scattering due to the antiferromagnetic alignment of the Gd moments. The residual resistivity at 22~K is 390~nΩ\Omegacm suggesting a good quality of the grown crystal. The magneto resistance attains a value of 1.0 × 104%1.0~\times~10^{4}\% with no sign of saturation, in a field of 1414~T, at T=2T = 2~K. Shubnikov de Hass (SdH) oscillations have been observed in the high field range of the magnetoresistance with five different frequencies corresponding to the extremal areas of the Fermi surface. Analysis of the Hall data revealed a near compensation of the charge carriers accounting for the extremely large magnetoresistance.

Keywords

Cite

@article{arxiv.2111.13836,
  title  = {Antiferromagnetism and large magnetoresistance in GdBi single crystal},
  author = {Gourav Dwari and Souvik Sasmal and Bishal Maity and Vikas Saini and Ruta Kulkarni and Arumugam Thamizhavel},
  journal= {arXiv preprint arXiv:2111.13836},
  year   = {2021}
}

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6 figures, 1 Table and 8pages