In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossal magnetoresistance (CMR) arises below Tc=78 K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn3Si2Te6 below Tc. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.
@article{arxiv.2302.13735,
title = {Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$},
author = {Chen Ran and Xinrun Mi and Junying Shen and Honghui Wang and Kunya Yang and Yan Liu and Guiwen Wang and Guoyu Wang and Youguo Shi and Aifeng Wang and Yisheng Chai and Xiaolong Yang and Mingquan He and Xin Tong and Xiaoyuan Zhou},
journal= {arXiv preprint arXiv:2302.13735},
year = {2023}
}