English

Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles

Materials Science 2015-02-06 v2 Computational Physics

Abstract

Phosphorene, the single layer counterpart of black phosphorus, is a novel two-dimensional semiconductor with high carrier mobility and a large fundamental direct band gap, which has attracted tremendous interest recently. Its potential applications in nano-electronics and thermoelectrics call for a fundamental study of the phonon transport. Here, we calculate the intrinsic lattice thermal conductivity of phosphorene by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations. The thermal conductivity of phosphorene at 300K300\,\mathrm{K} is 30.15Wm1K130.15\,\mathrm{Wm^{-1}K^{-1}} (zigzag) and 13.65Wm1K113.65\,\mathrm{Wm^{-1}K^{-1}} (armchair), showing an obvious anisotropy along different directions. The calculated thermal conductivity fits perfectly to the inverse relation with temperature when the temperature is higher than Debye temperature (ΘD=278.66K\Theta_D = 278.66\,\mathrm{K}). In comparison to graphene, the minor contribution around 5%5\% of the ZA mode is responsible for the low thermal conductivity of phosphorene. In addition, the representative mean free path (MFP), a critical size for phonon transport, is also obtained.

Keywords

Cite

@article{arxiv.1409.0279,
  title  = {Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles},
  author = {Guangzhao Qin and Qing-Bo Yan and Zhenzhen Qin and Sheng-Ying Yue and Ming Hu and Gang Su},
  journal= {arXiv preprint arXiv:1409.0279},
  year   = {2015}
}

Comments

5 pages and 6 figures, Supplemental Material available as http://www.rsc.org/suppdata/cp/c4/c4cp04858j/c4cp04858j1.pdf