The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
@article{arxiv.cond-mat/9408051,
title = {Anharmonic decay of phonons in semiconductors from first-principles calculations},
author = {Alberto Debernardi and Stefano Baroni and Elisa Molinari},
journal= {arXiv preprint arXiv:cond-mat/9408051},
year = {2007}
}
Comments
4 pages, uuencoded, compressed POSTSCRIPT file (debernardi.ps.Z). To extract it, use uudecode and uncompress in turn, SISSA Ref. 116/94/CM/SC