English

Analytical and Numerical Treatment of the Mott--Hubbard Insulator in Infinite Dimensions

Strongly Correlated Electrons 2009-11-10 v2

Abstract

We calculate the density of states in the half-filled Hubbard model on a Bethe lattice with infinite connectivity. Based on our analytical results to second order in t/Ut/U, we propose a new `Fixed-Energy Exact Diagonalization' scheme for the numerical study of the Dynamical Mean-Field Theory. Corroborated by results from the Random Dispersion Approximation, we find that the gap opens at Uc=4.43±0.05U_{\rm c}=4.43 \pm 0.05. Moreover, the density of states near the gap increases algebraically as a function of frequency with an exponent α=1/2\alpha=1/2 in the insulating phase. We critically examine other analytical and numerical approaches and specify their merits and limitations when applied to the Mott--Hubbard insulator.

Keywords

Cite

@article{arxiv.cond-mat/0303085,
  title  = {Analytical and Numerical Treatment of the Mott--Hubbard Insulator in Infinite Dimensions},
  author = {Michael P. Eastwood and Florian Gebhard and Eva Kalinowski and Satoshi Nishimoto and Reinhard M. Noack},
  journal= {arXiv preprint arXiv:cond-mat/0303085},
  year   = {2009}
}

Comments

22 pages, 16 figures; minor changes (one reference added, included comparison with Falicov-Kimball model)