In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a novel d-orbital hybridized Kagome-derived flat band in Ag/Si(111) 3×3 as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form a Kagome-like structure, where a delicate balance in the hopping parameters of the in-plane d-orbitals leads to destructive interference, resulting in a flat band. These results not only introduce a new platform for Kagome physics but also illuminate the potential for integrating metal-semiconductor interfaces into Kagome-related research, thereby opening a new avenue for exploring ideal two-dimensional Kagome systems.
@article{arxiv.2401.00265,
title = {An unconventional platform for two-dimensional Kagome flat bands on semiconductor surfaces},
author = {Jae Hyuck Lee and GwanWoo Kim and Inkyung Song and Yejin Kim and Yeonjae Lee and Sung Jong Yoo and Deok-Yong Cho and Jun-Won Rhim and Jongkeun Jung and Gunn Kim and Changyoung Kim},
journal= {arXiv preprint arXiv:2401.00265},
year = {2024}
}