English

An HDG Method for Time-dependent Drift-Diffusion Model of Semiconductor Devices

Numerical Analysis 2018-11-27 v1

Abstract

We propose a hybridizable discontinuous Galerkin (HDG) finite element method to approximate the solution of the time dependent drift-diffusion problem. This system involves a nonlinear convection diffusion equation for the electron concentration uu coupled to a linear Poisson problem for the the electric potential ϕ\phi. The non-linearity in this system is the product of the ϕ\nabla \phi with uu. An improper choice of a numerical scheme can reduce the convergence rate. To obtain optimal HDG error estimates for ϕ\phi, uu and their gradients, we utilize two different HDG schemes to discretize the nonlinear convection diffusion equation and the Poisson equation. We prove optimal order error estimates for the semidiscrete problem. We also present numerical experiments to support our theoretical results.

Keywords

Cite

@article{arxiv.1811.09705,
  title  = {An HDG Method for Time-dependent Drift-Diffusion Model of Semiconductor Devices},
  author = {Gang Chen and Peter Monk and Yangwen Zhang},
  journal= {arXiv preprint arXiv:1811.09705},
  year   = {2018}
}
R2 v1 2026-06-23T05:26:07.036Z