An Anderson-localized random nanolaser
Abstract
Precision is a virtue throughout science in general and in optics in particular where carefully fabricated nanometer-scale devices hold great promise for both classical and quantum photonics [1-6]. In such nanostructures, unavoidable imperfections often impose severe performance limits but, in certain cases, disorder may enable new functionalities [7]. Here we demonstrate on-chip random nanolasers where the cavity feedback is provided by the intrinsic disorder in a semiconductor photonic-crystal waveguide, leading to Anderson localization of light [8]. This enables highly efficient and broadband tunable lasers with very small mode volumes. We observe an intriguing interplay between gain, dispersion-controlled slow light, and disorder, which determines the cross-over from ballistic transport to Anderson localization. Such a behavior is a unique feature of non-conservative random media that enables the demonstration of all-optical control of random lasing. Our statistical analysis shows a way towards ultimate thresholdless random nanolasers.
Cite
@article{arxiv.1210.4764,
title = {An Anderson-localized random nanolaser},
author = {Jin Liu and Pedro D. Garcia and Sara Ek and Niels Gregersen and Troels Suhr and Martin Schubert and Jesper Mørk and Søren Stobbe and Peter Lodahl},
journal= {arXiv preprint arXiv:1210.4764},
year = {2016}
}