We investigate the interplay between the quantum coherence and statistics in electrically driven nano-structures. We obtain expression for the admittance and the current noise for a driven nano-capacitor in terms of the Floquet scattering matrix and derive a non-equilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of near-by gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double quantum dots.
@article{arxiv.0810.5402,
title = {Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics},
author = {Hee Chul Park and Kang-Hun Ahn},
journal= {arXiv preprint arXiv:0810.5402},
year = {2009}
}