English

AC-Hopping Conductance of Self-Organized Ge/Si Quantum Dot Arrays

Mesoscale and Nanoscale Physics 2007-05-23 v1

Abstract

Dense (n=4×1011n=4 \times 10^{11} cm2^{-2}) arrays of Ge quantum dots in Si host were studied using attenuation of surface acoustic waves (SAWs) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, ΔΓ=Γ(ω,H)Γ(ω,0)\Delta\Gamma=\Gamma(\omega, H)-\Gamma(\omega, 0), and change of velocity of SAW, ΔV/V=(V(H)V(0))/V(0)\Delta V /V=(V(H)-V(0)) / V(0), were measured in the temperature interval TT = 1.5-4.2 K as a function of magnetic field HH up to 6 T for the waves in the frequency range ff = 30-300 MHz. Basing on the dependences of ΔΓ\Delta\Gamma on HH, TT and ω\omega, as well as on its sign, we believe that the AC conduction mechanism is a combination of diffusion at the mobility edge with hopping between localized states at the Fermi level. The measured magnetic field dependence of the SAW attenuation is discussed basing on existing theoretical concepts.

Keywords

Cite

@article{arxiv.cond-mat/0311267,
  title  = {AC-Hopping Conductance of Self-Organized Ge/Si Quantum Dot Arrays},
  author = {Irina L. Drichko and Andrey M. Diakonov and Veniamin I. Kozub and Ivan Yu. Smirnov and Yuri M. Galperin and Andrew I. Yakimov and Alexander I. Nikiforov},
  journal= {arXiv preprint arXiv:cond-mat/0311267},
  year   = {2007}
}

Comments

4 pages, 6 figures