Abnormal Staebler-Wronski effect of amorphous silicon
Abstract
Great achievements in last five years, such as record-efficient amorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edge perovskite/SHJ tandem solar cells, place hydrogenated amorphous silicon (a-Si:H) at the forefront of emerging photovoltaics. Due to the extremely low doping efficiency of trivalent boron (B) in amorphous tetravalent silicon, light harvesting of aforementioned devices are limited by their fill factors (FF), which is a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H for minimizing the FF losses. Here we report intensive light soaking can efficiently boost the dark conductance of B-doped a-Si:H "thin" films, which is an abnormal Staebler-Wronski effect. By implementing this abnormal effect to SHJ solar cells, we achieve a certificated power conversion efficiency (PCE) of 25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer. This PCE is one of the highest reported values for total-area "top/rear" contact silicon solar cells. The FF reaches 98.30 per cent of its Shockley-Queisser limit.
Cite
@article{arxiv.2106.01657,
title = {Abnormal Staebler-Wronski effect of amorphous silicon},
author = {Wenzhu Liu and Jianhua Shi and Liping Zhang and Anjun Han and Shenglei Huang and Xiaodong Li and Jun Peng and Yuhao Yang and Yajun Gao and Jian Yu and Kai Jiang and Xinbo Yang and Zhenfei Li and Junlin Du and Xin Song and Youlin Yu and Zhixin Ma and Yubo Yao and Haichuan Zhang and Lujia Xu and Jingxuan Kang and Yi Xie and Hanyuan Liu and Fanying Meng and Frédéric Laquai and Zengfeng Di and Zhengxin Liu},
journal= {arXiv preprint arXiv:2106.01657},
year = {2021}
}
Comments
34 pages, 4 figures in main context,11 figures in supplementary materials