English

Ab-initio calculation of band alignments for opto-electronic simulations

Materials Science 2019-01-04 v1

Abstract

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.

Keywords

Cite

@article{arxiv.1901.00667,
  title  = {Ab-initio calculation of band alignments for opto-electronic simulations},
  author = {Jan Oliver Oelerich and Maria J. Weseloh and Kerstin Volz and Stephan W. Koch},
  journal= {arXiv preprint arXiv:1901.00667},
  year   = {2019}
}

Comments

5 pages, 5 figures