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A Two-Step Etching Method to Fabricate Nanopores in Silicon

Other Computer Science 2008-02-22 v1

Abstract

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

Cite

@article{arxiv.0802.3087,
  title  = {A Two-Step Etching Method to Fabricate Nanopores in Silicon},
  author = {G. -J. Wang and W. -Z. Chen and K. J. Chang},
  journal= {arXiv preprint arXiv:0802.3087},
  year   = {2008}
}

Comments

Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

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