A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium
Abstract
A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.
Keywords
Cite
@article{arxiv.1003.4926,
title = {A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium},
author = {Hoon Ryu and Sunhee Lee and Gerhard Klimeck},
journal= {arXiv preprint arXiv:1003.4926},
year = {2010}
}
Comments
IEEE proceedings of the 13th International Workshop on Computational Electronics (IWCE-13)