The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics and potential applications. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN3) on both oxides and semiconductors. The polar symmetry of CeTaN3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains in CeTaN3 films using piezo-response force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN3 reaches approximately 20 uC/cm2 at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy-storage devices with enhanced performance, scalability, and manufacturability.
@article{arxiv.2410.16987,
title = {A single-phase epitaxially grown ferroelectric perovskite nitride},
author = {Songhee Choi and Qiao Jin and Xian Zi and Dongke Rong and Jie Fang and Jinfeng Zhang and Qinghua Zhang and Wei Li and Shuai Xu and Shengru Chen and Haitao Hong and Cui Ting and Qianying Wang and Gang Tang and Chen Ge and Can Wang and Zhiguo Chen and Lin Gu and Qian Li and Lingfei Wang and Shanmin Wang and Jiawang Hong and Kuijuan Jin and Er-Jia Guo},
journal= {arXiv preprint arXiv:2410.16987},
year = {2025}
}