We make stacks of intrinsic Josephson junctions (IJJs) imbedded in the bulk of very thin (d≤100~nm) Bi2Sr2CaCu2O8+x single crystals. By precisely controlling the etching depth during the double-sided fabrication process, the stacks can be reproducibly tailor-made to be of any microscopic height (0−9nm<d), i.e. enclosing a specified number of IJJ (0-6), including the important case of a single junction. We discuss reproducible gap-like features in the current-voltage characteristics of the samples at high bias.
@article{arxiv.cond-mat/0605475,
title = {A single intrinsic Josephson junction with double-sided fabrication technique},
author = {L. X. You and M. Torstensson and A. Yurgens and D. Winkler and C. T. Lin and B. Liang},
journal= {arXiv preprint arXiv:cond-mat/0605475},
year = {2009}
}
Comments
3 pages, 4 figures, to be published in APL May. 29