The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. To the best of our knowledge, this is the first report of such a p-n diode, using the polaronic semiconducting regime of doped manganites.
@article{arxiv.cond-mat/0108163,
title = {A 'p-n' diode with hole and electron-doped lanthanum manganite},
author = {C. Mitra and P. Raychaudhuri and G. Kobernik and K. Dorr and R. Pinto and K-H. Muller and L. Schultz},
journal= {arXiv preprint arXiv:cond-mat/0108163},
year = {2009}
}
Comments
PostScript text and 2 figures, to be published in Appl. Phys. Lett.