Single-atom catalysts (SACs) maximize atom efficiency and exhibit unique electronic structures, yet realizing precise and scalable atomic dispersion remains a key challenge. Here, we report a non-equilibrium strategy for the scalable synthesis of SACs via ion implantation, enabling precise stabilization of metal atoms on diverse supports. Using an industrial-grade ion source, wafer-scale ion implantation with milliampere-level beam currents enables high-throughput fabrication of SACs, while the synergistic energy-mass effects stabilize isolated metal atoms in situ. A library of 36 SACs was constructed, and the resulting Pt/MoS2 exhibits outstanding hydrogen evolution performance with an overpotential of only 26 mV at 10 mA cm-2 and exceptional long-term stability, surpassing commercial Pt/C. This work demonstrates ion implantation as a versatile platform bridging fundamental SACs design and scalable manufacturing, providing new opportunities for high-performance catalysts in energy conversion applications.
@article{arxiv.2601.12477,
title = {A non-equilibrium strategy for the general synthesis of single-atom catalysts},
author = {Yue Li and Yang Xu and Yunbiao Zhao and Mingwei Cui and Xiner Chen and Liu Qian and Jin Zhang and Xueting Feng and Ziqiang Zhao},
journal= {arXiv preprint arXiv:2601.12477},
year = {2026}
}