A model for pressurized hydrogen induced thin film blisters
Abstract
We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed. In the first part, the energy balance required for a stable blister is calculated. From this model, the adhesion energy of the blister cap, the internal pressure and the critical H-dose for blister formation can be calculated. In the second part, the flux balance required for a blister to grow to a stable size is calculated. The model is applied to blisters formed in a Mo/Si multilayer after being exposed to hydrogen ions. From the model the adhesion energy of the Mo/Si blister cap was calculated to be around 1.05 J/m2 with internal pressures in the range of 175-280 MPa. Based on the model a minimum ion dose for the onset of blister formation was calculated to be d = 4.2*10^18 ions/cm2. From the flux balance equations the diffusion constant for the Mo/Si blister cap was estimated to be D_H2 = (10+-1) *10^18 cm2/s.
Keywords
Cite
@article{arxiv.1609.01092,
title = {A model for pressurized hydrogen induced thin film blisters},
author = {R. A. J. M. van den Bos and V. Reshetniak and C. J. Lee and J. Benschop and F. Bijkerk},
journal= {arXiv preprint arXiv:1609.01092},
year = {2016}
}
Comments
7 pages, 6 figures, 2 tables