English

A general relation between stacking order and Chern index: a topological map of minimally twisted bilayer graphene

Mesoscale and Nanoscale Physics 2021-09-22 v1 Materials Science

Abstract

We derive a general relation between the stacking vector u{\bf u} describing the relative shift of two layers of bilayer graphene and the Chern index. We find C=νsign(VABVBA)C = \nu - \text{sign}\left(|V_{AB}|-|V_{BA}|\right), where ν\nu is a valley index and Vαβ|V_{\alpha\beta}| the absolute value of stacking potentials that depend on u{\bf u} and that uniquely determine the interlayer interaction; AA stacking plays no role in the topological character. With this expression we show that while ideal and relaxed minimally twisted bilayer graphene appear so distinct as to be almost different materials, their Chern index maps are, remarkably, identical. The topological physics of this material is thus strongly robust to lattice relaxations.

Keywords

Cite

@article{arxiv.2006.10393,
  title  = {A general relation between stacking order and Chern index: a topological map of minimally twisted bilayer graphene},
  author = {S. Theil and M. Fleischmann and R. Gupta and F. Wullschläger and S. Sharma and B. Meyer and S. Shallcross},
  journal= {arXiv preprint arXiv:2006.10393},
  year   = {2021}
}