Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the identification of the transformed phases. Raman line as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates.
@article{arxiv.0807.0843,
title = {A complete Raman mapping of phase transitions in Si under indentation},
author = {C. R. Das and H. C. Hsu and S. Dhara and A. K. Bhaduri and B. Raj and L. C. Chen and K. H. Chen and S. K. Albert and A. Ray and Y. Tzeng},
journal= {arXiv preprint arXiv:0807.0843},
year = {2008}
}