Nanoscale resistive memories are expected to fuel dense integration of electronic synapses for large-scale neuromorphic system. To realize such a brain-inspired computing chip, a compact CMOS spiking neuron that performs in-situ learning and computing while driving a large number of resistive synapses is desired. This work presents a novel leaky integrate-and-fire neuron design which implements the dual-mode operation of current integration and synaptic drive, with a single opamp and enables in-situ learning with crossbar resistive synapses. The proposed design was implemented in a 0.18 μm CMOS technology. Measurements show neuron's ability to drive a thousand resistive synapses, and demonstrate an in-situ associative learning. The neuron circuit occupies a small area of 0.01 mm2 and has an energy-efficiency of 9.3 pJ/spike/synapse.
@article{arxiv.1505.07814,
title = {A CMOS Spiking Neuron for Brain-Inspired Neural Networks with Resistive Synapses and In-Situ Learning},
author = {Xinyu Wu and Vishal Saxena and Kehan Zhu and Sakkarapani Balagopal},
journal= {arXiv preprint arXiv:1505.07814},
year = {2015}
}