English

4f Conduction in the Magnetic Semiconductor NdN

Strongly Correlated Electrons 2019-11-20 v1 Materials Science

Abstract

We report the growth of films of the intrinsic ferromagnetic semiconductor NdN, and an investigation of their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized tail at the base of the conduction band. The results reveal a heavy-fermion 4f/5d band lying where it can be occupied at controllable levels with nitrogen-vacancy donors.

Keywords

Cite

@article{arxiv.1910.02163,
  title  = {4f Conduction in the Magnetic Semiconductor NdN},
  author = {W. F. Holmes-Hewett and R. G. Buckley and B. J. Ruck and F. Natali and H. J. Trodahl},
  journal= {arXiv preprint arXiv:1910.02163},
  year   = {2019}
}

Comments

6 pages, 5 figures

R2 v1 2026-06-23T11:35:04.781Z