Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors
Abstract
Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the incomplete understanding of surface damage at the 4H-SiC/SiO interface.In this work, we present a combined experimental and TCAD simulation study of X-ray radiation-induced surface damage on n-type 4H-SiC MOS capacitors fabricated at CNM (Centro Nacional de Microelectronica, Barcelona), irradiated up to 10 Mrad. High-frequency (100 kHz) and quasi-static capacitance-voltage (C--V) measurements are used to evaluate the evolution of fixed oxide charge density and interface trap density as a function of dose.A dose-dependent TCAD surface model is developed and validated against the full set of measurements. The optimized model reproduces the measured C--V characteristics across the entire irradiation range and provides a physically grounded baseline for simulations of n-type 4H-SiC-based detectors. It can be used as a starting point for predictive modeling of irradiated detectors.
Cite
@article{arxiv.2605.29375,
title = {Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors},
author = {Khaoula Aouadj and Alessandro Fondacci and Arianna Morozzi and Daniele Passeri and Tommaso Croci and Sebastian Alexander Onder and Daniel Radmanovac and Thomas Bergauer and Serena Mattiazzo and Francesco Moscatelli},
journal= {arXiv preprint arXiv:2605.29375},
year = {2026}
}